Thermodynamics Research Center / ThermoML | Journal of Chemical and Engineering Data

ABSTRACT

Many metal 2,2,6,6-tetramethyl-3,5-heptandionate [M(tmhd)n] compounds are volatile enough to be useful as precursors of the metals in vapor-phase deposition processes, for example, metal organic chemical vapor deposition (MOCVD). The thermal stability, vapor pressures, and gaseous diffusion coefficients of these compounds are, therefore, of fundamental importance for achieving reproducible and effective depositions. The present communication reports the thermal stability, vapor pressures, enthalpies of sublimation, and diffusion coefficients (in nitrogen and/or helium) for some metal 2,2,6,6-tetramethyl-3,5-heptandionate compounds [M(tmhd)n], namely, [Al(tmhd)3], [Cr(tmhd)3], [Cu(tmhd)2], [Fe(tmhd)3], [Mn(tmhd)3], and [Ni(tmhd)2] at temperatures between (341 and 412) K at ambient pressure. All of these are found to be stable under the investigated experimental conditions and thus are suitable precursors for CVD.