As the speed and degree of integration of semiconductor devices are increased, more heat is generated. The performance and lifetime of semiconductor devices depend on the dissipation of the generated heat. The tungsten-copper alloy has high electrical and thermal conductivities, a low contact resistance, and a low coefficient of thermal expansion. Because of these properties, tungsten-copper alloy is used as a shielding material for micro-wave package, and a heat sink for the high power IC. In this study, the thermal conductivity and thermal expansion of several kinds of tungsten-copper (W-Cu) composites were investigated, using composition of 5~30 wt% copper and balanced with tungsten. The powders of tungsten-copper were produced by the spray conversion method and the W-Cu alloys were fabricated by the metal injection molding. The thermal conductivity of W-Cu alloy gradually decreased with temperature increase. Thermal conductivity of W-30wt% Cu composite was 238 W/(mK) at room temperature.
Compounds
#
Formula
Name
1
W
tungsten
2
Cu
copper
Datasets
The table above is generated from the ThermoML associated json file (link above).
POMD and RXND refer to PureOrMixture and Reaction Datasets. The compound numbers are included in properties, variables, and phases, if specificied;
the numbers refer to the table of compounds on the left.
Type
Compound-#
Property
Variable
Constraint
Phase
Method
#Points
POMD
1
2
Molar heat capacity at constant pressure, J/K/mol ; Crystal